• DocumentCode
    261234
  • Title

    SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation

  • Author

    Bhuvaneshwari, Y.V. ; Sai, Nama Prem ; Kumar, N. Vinodh ; Thiruvenkatesan, C. ; Srinivasan, R.

  • Author_Institution
    ECE Dept., SSN Coll. of Eng., Chennai, India
  • fYear
    2014
  • fDate
    27-28 Feb. 2014
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    In this paper radiation performance of 4T, 6T, 7T, 8T and 10T MOSFET based-SRAMs are studied using TCAD simulations. The minimum dose (critical dose) required to flip contents of the cell are extracted, compared and analyzed. The simulation results show that 10T SRAM shows better radiation performance whereas 4T-SRAM shows worst radiation performance.
  • Keywords
    MOSFET; SRAM chips; circuit simulation; integrated circuit design; radiation hardening (electronics); technology CAD (electronics); 4T-SRAM; MOSFET; SEU study; TCAD simulation; Doping; Educational institutions; MOSFET; Random access memory; Semiconductor process modeling; Single event upsets; Topology; Critical Dose; SEU; TCAD; Various topologies of SRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Communication and Embedded Systems (ICICES), 2014 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-3835-3
  • Type

    conf

  • DOI
    10.1109/ICICES.2014.7034119
  • Filename
    7034119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=261234