Title :
Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1μm InAlAs/InGaAs HEMT´s
Author :
Kwon, Y. ; Tutt, M. ; Ng, G.I. ; Pavlidis, D. ; Brock, T. ; Marsh, P. ; Oh, J. ; Castagné, J. ; Linh, N.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A study in which the deep recess was found to be essential in order to maintain a high gate aspect ratio and thus larger G mGds and Cgs/C gd ratios is described. This ensures a high power gain and high fmax which is a figure of merit in microwave circuit operation. Also, proper recessed devices show less microwave noise and broader noise minima. The optimum recess for both microwave and noise performance was found to be around Idss of 500 mA/mm for the HEMT and showed f max of 217 GHz, fT of 173 GHz, and a minimum noise figure of 0.6 dB. The device geometry effect was investigated, and the degradation of the device performance due to the parasitics was found for small gate width devices. Large gate width devices were limited in high frequency performance due to the high gate metal resistance. Overall, an appropriate recess, aspect ratio, and device periphery must be selected for optimum microwave performance
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.6 dB; 173 GHz; 217 GHz; InAlAs-InGaAs; deep gate-recess; device geometry; gate aspect ratio; gate metal resistance; microwave performance; mushroom gate; noise properties; parasitics; Computational geometry; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Microwave devices; Noise figure; Resists; Signal to noise ratio; Writing;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170043
