Title :
Radiation-Induced Soft Errors and Floating Gate Memories
Author :
Caywood, J.M. ; Prickett, B.L.
Author_Institution :
Xicor, Inc., 851 Buckeye Ct., Milpitas, CA 95035
Abstract :
A new failure mechanism which may be induced in floating gate memories by ionizing radiation is discussed. This mechanism, which is designated a "firm error", is modeled in some detail. Calculations which show that the MTBF for alpha particles emitted by ceramic packaging materials is > 100,000 years are verified experimentally. The effect of device scaling on this mechanism is also discussed.
Keywords :
Alpha particles; Ceramics; Charge transfer; Circuits; Electrons; Error correction; Failure analysis; Ionizing radiation; Nonvolatile memory; Optical scattering;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361979
