• DocumentCode
    2612417
  • Title

    Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films

  • Author

    Yamabe, Kikuo ; Taniguchi, Kenji ; Matsushita, Yoshiaki

  • Author_Institution
    Toshiba Corporation, Toshiba Research and Development Center, 72, Horikawacho Saiwai-ku Kawasaki-city, Kanagawa, 210, Japan
  • fYear
    1983
  • fDate
    30407
  • Firstpage
    184
  • Lastpage
    190
  • Abstract
    Thickness dependence of total dielectric breakdown failure fraction of thermal SiO2 films has a minimum value at around l10A and a maximum value at around 400A. It is concluded that two main origins of dielectric breakdown failures of thin SiO2 film are surface contamination prior to gate oxidation and microdefects in Si substrates.
  • Keywords
    Dielectric breakdown; Dielectric substrates; Dielectric thin films; Electric breakdown; Oxidation; Research and development; Semiconductor device breakdown; Semiconductor films; Surface contamination; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1983. 21st Annual
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1983.361982
  • Filename
    4208503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2612417