Depleted surface layer AlInAs/GaInAs/InP HFETs

Author

Daembkes, H. ; Dickmann, J. ; Wiersch, A. ; Künzel, H.

Author_Institution

Daimler-Benz AG Res. Center, Ulm, Germany

fYear

1991

fDate

5-7 Aug 1991

Firstpage

198

Lastpage

207

Abstract

An investigation of InP HFETs that combine a highly doped, thick cap layer with an undoped surface layer by using a highly doped thin surface layer that is depleted by the surface potential is discussed. Very good DC characteristics without kinks, good gate characteristics, and excellent microwave performance are observed. For 0.3-μm gate length devices f_maxGU of more than 250 GHz is obtained. From measurements of the bias dependent S-parameters, the corresponding variation of equivalent circuit elements is deduced. The measurements show the influence of the depleted surface layer

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.3 micron; 250 GHz; AlInAs-GaInAs-InP; DC characteristics; HEMT; HFETs; bias dependent S-parameters; gate characteristics; highly doped cap layer; highly doped thin surface layer; microwave performance; submicron gate; surface potential; thick cap layer; undoped surface layer; Electric breakdown; Gallium arsenide; HEMTs; Indium phosphide; Leakage current; MODFETs; Microwave devices; Out of order; Scattering parameters; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170049

Filename

170049