Title :
Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET´s
Author :
Dickmann, J. ; Woelk, C. ; Schurr, A. ; Wiersch, A. ; Kohn, E. ; Narozny, P. ; Daembkes, H.
Author_Institution :
Daimler-Benz AG Res. Center, Ulm, Germany
Abstract :
An investigation of the introduction of doping into the channel of Al0.25Ga0.75As/In0.2Ga0.8As HFETs to obtain high saturation currents and reasonable low noise performance is discussed. The device performance is experimentally compared to that of undoped channel HFETs having the same layer structure. For a 0.35-μm gate length backside doped channel HFET a maximum transconductance of 625 mS/mm, a maximum saturation current at VGs=+0.8 V of 720 mA/mm, a power gain cutoff frequency of 195 GHz, and at 18 GHz a noise figure of 1.1 dB with 17 dB associated gain were measured
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; solid-state microwave devices; 0.35 micron; 1.1 dB; 17 dB; 18 GHz; 195 GHz; 625 mS; Al0.25Ga0.75As-In0.2Ga0.8As; HEMT; HFETs; high saturation currents; high speed doped channel; low noise performance; optimum condition; Current measurement; Cutoff frequency; Doping; Frequency measurement; Gain; HEMTs; MODFETs; Noise figure; Power measurement; Transconductance;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170050
