Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET´s

Author

Dickmann, J. ; Woelk, C. ; Schurr, A. ; Wiersch, A. ; Kohn, E. ; Narozny, P. ; Daembkes, H.

Author_Institution

Daimler-Benz AG Res. Center, Ulm, Germany

fYear

1991

fDate

5-7 Aug 1991

Firstpage

208

Lastpage

217

Abstract

An investigation of the introduction of doping into the channel of Al_0.25Ga_0.75As/In_0.2Ga_0.8As HFETs to obtain high saturation currents and reasonable low noise performance is discussed. The device performance is experimentally compared to that of undoped channel HFETs having the same layer structure. For a 0.35-μm gate length backside doped channel HFET a maximum transconductance of 625 mS/mm, a maximum saturation current at V_Gs=+0.8 V of 720 mA/mm, a power gain cutoff frequency of 195 GHz, and at 18 GHz a noise figure of 1.1 dB with 17 dB associated gain were measured

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; solid-state microwave devices; 0.35 micron; 1.1 dB; 17 dB; 18 GHz; 195 GHz; 625 mS; Al_0.25Ga_0.75As-In_0.2Ga_0.8As; HEMT; HFETs; high saturation currents; high speed doped channel; low noise performance; optimum condition; Current measurement; Cutoff frequency; Doping; Frequency measurement; Gain; HEMTs; MODFETs; Noise figure; Power measurement; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170050

Filename

170050