Characterization and Screening of SiO2 Defects in EEPROM Structures

Author

Shiner, R.E. ; Mielke, N.R. ; Haq, R.

Author_Institution

Intel Corporation, 3065 Bowers Avenue, Santa Clara, California 95051. (408) 987-8080

fYear

1983

fDate

5-7 April 1983

Firstpage

248

Lastpage

256

Keywords

EPROM; Electrons; Nonvolatile memory; Silicon compounds; Stress; Temperature; Testing; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1983. 21st Annual

Conference_Location

Phoenix, AZ, USA

ISSN

0735-0791

Type

DOI

10.1109/IRPS.1983.361991

Filename

4208512

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