DocumentCode :
2612773
Title :
Radiation Effects in GaAs Devices and ICs
Author :
Anderson, W.T., Jr. ; Binari, S.C.
Author_Institution :
Naval Research Laboratory, Washington, D. C. 20375
fYear :
1983
fDate :
30407
Firstpage :
316
Lastpage :
319
Keywords :
Electron traps; FETs; Gallium arsenide; JFETs; Neutrons; Particle measurements; Radiation effects; Schottky diodes; Time measurement; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1983.362004
Filename :
4208525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2612773
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