Title :
Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films
Author :
Klema, Jon ; Pyle, Ronald ; Domangue, Edward
Author_Institution :
Motorola, Inc., MOS Integrated Circuit Group, 3501 Ed Bluestein Blvd., Austin, Texas 78721
Abstract :
Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.
Keywords :
Aluminum; Contamination; Coupling circuits; Integrated circuit reliability; MOS integrated circuits; Metallization; Nitrogen; Passivation; Semiconductor films; Silicon;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362012
