Title :
New Failure Mechanisms in Sputtered Aluminum-Silicon Films
Author :
Curry, J. ; Fitzgibbon, G. ; Guan, Y. ; Muollo, R. ; Nelson, G. ; Thomas, Abu
Author_Institution :
International Business Machines Corporation, P. O. Box 390, Poughkeepsie, New York 12602
Abstract :
A new failure mechanism resulting in open metal bit- lines was observed during reliability testing of vendor 64k dynamic random access memory (RAIM) products using sputtered Al-Si metallurgy. Life test data, physical failure analysis, and metal film characterization are presented, The observed phenomenan is not strictly electromigratiotn, but rather a temperature-dependent metal-deformation process, such as creep, resulting in intergranular fracture.
Keywords :
Failure analysis; Kinetic theory; Passivation; Random access memory; Semiconductor films; Silicon; Temperature; Testing; Very large scale integration; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362013
