Title :
A 1.6–9.7 GHz CMOS LNA Linearized by Post Distortion Technique
Author :
Benqing Guo ; Xiaolei Li
Author_Institution :
Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
A linearized ultra-wideband (UWB) CMOS low noise amplifier (LNA) is proposed. The linearity is improved by a post distortion technique, employing PMOS as an auxiliary FET to cancel the second- and the third-order nonlinear currents of common-gate LNA. A three-section band-pass Chebyshev filter is presented for wideband input matching. The LNA implemented in a 0.18 μm CMOS technology demonstrates that IIP3 and IIP2 have about 9 and 6.9 dB improvements in broad frequency range, respectively. Power gain of 9.6-12.6 dB and noise figure (NF) of 3.9-5.8 dB are obtained in the frequency range of 1.6-9.7 GHz with a power dissipation of 10.6 mW under a 1.8 V power supply.
Keywords :
CMOS analogue integrated circuits; Chebyshev filters; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; band-pass filters; field effect MMIC; low noise amplifiers; ultra wideband technology; CMOS LNA; PMOS transistor; UWB; band-pass Chebyshev filter; frequency 1.6 GHz to 9.7 GHz; gain 9.6 dB to 12.6 dB; linearized ultra-wideband; low noise amplifier; noise figure; noise figure 3.9 dB to 5.8 dB; post distortion technique; power 10.6 mW; second-order nonlinear currents; size 0.18 mum; third-order nonlinear currents; voltage 1.8 V; CMOS integrated circuits; Impedance matching; Logic gates; Noise measurement; Nonlinear distortion; Transistors; Linearity; low noise amplifier (LNA); noise figure (NF); post distortion; ultra-wideband (UWB);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2281426
