DocumentCode
2612989
Title
Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices
Author
Grubin, H.L. ; Anderson, W.T., Jr. ; Christou, A.
Author_Institution
Scientific Research Associates, inc., Glastonbury, CT
fYear
1984
fDate
30773
Firstpage
52
Lastpage
58
Abstract
A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.
Keywords
Anodes; Electron mobility; FETs; Failure analysis; Gallium arsenide; Gunn devices; Logic devices; Propagation delay; Schottky barriers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362019
Filename
4208543
Link To Document