Title :
Reliability of Gate Metallization in Power GaAs MESFETs
Author :
Katsukawa, K. ; Kose, Y. ; Kanamori, M. ; Sando, S.
Author_Institution :
NEC Corporation, Shimonumabe. Nakahara-ku, Kawasaki, 211 Japan. 044-433-1111 ext (4560)
Abstract :
Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.
Keywords :
Degradation; Electrodes; FETs; Gallium arsenide; Life testing; MESFETs; Metallization; Positron emission tomography; Telecommunications; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362020
