• DocumentCode
    2613197
  • Title

    Reliability Prediction using Large MOS Capacitors

  • Author

    Domangue, ED ; Rivera, Ricardo ; Shepard, Clark

  • Author_Institution
    MOTOROLA, INC., 3501 ED BLUESTEIN BLVD., AUSTIN, TEXAS 78721. (512) 928-6640
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    140
  • Lastpage
    145
  • Abstract
    Large MOS capacitors were used in a study of the dielectric breakdown mechanism to establish the relationship among the results of various test methods. Reliance on models was avoided through the use of a test vehicle which duplicated the structures of a 64K dynamic memory device. A method is proposed to predict device reliability using process monitors at the time of wafer manufacture.
  • Keywords
    Dielectric breakdown; Dielectric substrates; Electrodes; Life estimation; MOS capacitors; Predictive models; Random access memory; Semiconductor device modeling; Testing; Vehicle dynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362033
  • Filename
    4208557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613197