Title :
Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film
Author :
Hirayama, M. ; Matsukawa, T. ; Tsubouchi, N. ; Nakata, H.
Author_Institution :
LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664 Japan
Abstract :
Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.
Keywords :
Dielectric breakdown; Dielectric measurements; Dielectric thin films; Electric breakdown; Oxidation; Pressure measurement; Semiconductor films; Silicon compounds; Temperature dependence; Time measurement;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362034
