• DocumentCode
    2613206
  • Title

    Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film

  • Author

    Hirayama, M. ; Matsukawa, T. ; Tsubouchi, N. ; Nakata, H.

  • Author_Institution
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664 Japan
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    146
  • Lastpage
    151
  • Abstract
    Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.
  • Keywords
    Dielectric breakdown; Dielectric measurements; Dielectric thin films; Electric breakdown; Oxidation; Pressure measurement; Semiconductor films; Silicon compounds; Temperature dependence; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362034
  • Filename
    4208558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613206