Title :
Characteristics & Reliability of 100Ã\x85 Oxides
Author :
Baglee, David A.
Author_Institution :
Advanced Development Department, Texas Instruments Incorporated, P. O. Box 1443, Houston, Texas 77001
Abstract :
The electrical characteristics and the long term reliability of 100Ã… silicon dioxide films is examined in detail. In this paper the initial "as grown" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Ã… oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.
Keywords :
Capacitors; Circuits; Electric variables; Equations; Etching; Instruments; Leakage current; Silicon compounds; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362035
