DocumentCode
2613351
Title
Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability
Author
Fischer, F. ; Neppl, F.
Author_Institution
Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D 8000 Mÿnchen 83, Tel. 089/6362228, FRG
fYear
1984
fDate
30773
Firstpage
190
Lastpage
192
Abstract
It is shown that an Al-Si-Ti alloy containing 0.1-0.2wt.% Ti used as an IC-interconnect material reaches the electromigration strength of Al-Si-Cu and simultaneously avoids the disadvantages of Al-Si-Cu like enhanced corrosion susceptibility or dry etching problems. The stabilizing effect of Ti is demonstrated by life testing and additonally by monitoring changes of residual resistivity and heat transfer to the substrate during temperature current stress.
Keywords
Conductivity; Corrosion; Dry etching; Electromigration; Heat transfer; Life testing; Monitoring; Residual stresses; Temperature; Titanium alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362043
Filename
4208567
Link To Document