DocumentCode
2613471
Title
Phosphorus Migration Kinetics from PSG to Glass Passivation Surface
Author
DiGiacomo, G.
Author_Institution
International Business Machines Corporation, P. O. Box 390, Poughkeepsie, NY 12602
fYear
1984
fDate
30773
Firstpage
223
Lastpage
228
Abstract
The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.
Keywords
Acceleration; Annealing; Corrosion; Electron beams; Glass; Kinetic theory; Mechanical factors; Moisture; Passivation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362050
Filename
4208574
Link To Document