DocumentCode :
2613471
Title :
Phosphorus Migration Kinetics from PSG to Glass Passivation Surface
Author :
DiGiacomo, G.
Author_Institution :
International Business Machines Corporation, P. O. Box 390, Poughkeepsie, NY 12602
fYear :
1984
fDate :
30773
Firstpage :
223
Lastpage :
228
Abstract :
The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.
Keywords :
Acceleration; Annealing; Corrosion; Electron beams; Glass; Kinetic theory; Mechanical factors; Moisture; Passivation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1984.362050
Filename :
4208574
Link To Document :
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