• DocumentCode
    2613471
  • Title

    Phosphorus Migration Kinetics from PSG to Glass Passivation Surface

  • Author

    DiGiacomo, G.

  • Author_Institution
    International Business Machines Corporation, P. O. Box 390, Poughkeepsie, NY 12602
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    223
  • Lastpage
    228
  • Abstract
    The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.
  • Keywords
    Acceleration; Annealing; Corrosion; Electron beams; Glass; Kinetic theory; Mechanical factors; Moisture; Passivation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362050
  • Filename
    4208574