DocumentCode
2613588
Title
Scalable Gummel-Poon model for high-speed SiGe HBTs
Author
Weijian, Zhou ; Zhiqun, Cheng ; Liu Jun
Author_Institution
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
fYear
2010
fDate
22-24 Sept. 2010
Firstpage
316
Lastpage
320
Abstract
A scalable Gummel-Poon model for high-speed SiGe HBTs is developed based on Gummel-Poon model in this paper. This model is well applied to simulation software of ADS and Hspice. The scaling is mainly based on different physical dimension of individual devices, all the scaling parameters in the scaling equations are extracted directly from the measurement data of various dimension. The correctness of this scalable model is further verified by the quite good fit between measured and simulated results on DC, CV, Ft and S parameters at the frequency up to 30 GHz.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; ADS simulation software; Hspice; SiGe; high-speed HBT; scalable Gummel-Poon model; Electrical resistance measurement; Equations; Integrated circuit modeling; Mathematical model; Parameter extraction; Silicon germanium; Time measurement; Gummel-Poon model; SiGe HBT; scalable model;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location
Shanghai
Print_ISBN
978-1-4244-6735-8
Electronic_ISBN
978-1-4244-6736-5
Type
conf
DOI
10.1109/PRIMEASIA.2010.5604899
Filename
5604899
Link To Document