DocumentCode :
2613624
Title :
Electromigration Study of the Al-Cu/Ti/Al-Cu System
Author :
Iyer, Subramanian S. ; Ting, Chung-yu
Author_Institution :
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
fYear :
1984
fDate :
30773
Firstpage :
273
Lastpage :
278
Abstract :
We have investigated unpassivated Al-Cu(4.5%)/Ti/Al-Cu laminated structures for their electromigration behavior for linewidths between 5 ¿ and 1.5 ¿ We find that although line opens are not the dominant failure mode, significant mass accumulation occurs all along the line leading to the real possibility of extrusion induced shorts. In our experiments laminated structures had lifetimes in excess of conventional Al-Cu lines by at least a factor of 10. Cu migration takes place in the early part of the stripe life. Al migration occurs preferentially from the top layer. Furthermore, a decrease of the line resistance, unlike in conventional structures, is observed during current stress. The Ti intermetallic layer does not show any motion.
Keywords :
Annealing; Circuit testing; Condition monitoring; Conductivity; Current density; Electromigration; Integrated circuit interconnections; Intermetallic; Silicon; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1984.362058
Filename :
4208582
Link To Document :
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