• DocumentCode
    2613873
  • Title

    XPS-Analysis of GaAs-Surface Quality Affecting Interelectrode Material Migration

  • Author

    Kretschmer, K.-H. ; Hartnagel, H.L.

  • Author_Institution
    Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 6loo Darmstadt, FRG
  • fYear
    1985
  • fDate
    31107
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    XPS-studies of differently treated (100)-GaAs-surfaces were undertaken and correlated with the threshold for material migration across the GaAs-surface between neighbouring Al-electrodes. 5 surface conditions based on various etching and cleaning processes as commonly employed for the manufacture of GaAs devices have been investigated. The XPS-spectra show that high threshold values can be obtained by treatments resulting in a strongly reduced surface oxygen content.
  • Keywords
    Circuits; Cleaning; Electrodes; Electrons; Etching; Gallium arsenide; Manufacturing processes; Semiconductor device measurement; Surface treatment; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1985. 23rd Annual
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1985.362073
  • Filename
    4208600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613873