• DocumentCode
    2614005
  • Title

    Stability of GaAs/Ge solar cells with standard front contacts after long-term, high-temperature exposure

  • Author

    Gasner, Steven ; Pack, George ; Gates, Mark ; Given, Ron

  • Author_Institution
    Lockheed Missiles & Space Co. Inc., Sunnyvale, CA, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    1314
  • Abstract
    A series of accelerated high-temperature soak tests has been performed on GaAs/Ge solar cells with standard front contacts in order to determine their ability to operate on space missions that require the solar array to operate at temperatures up to 250°C for long periods of time. Four soak tests were performed: one at 300°C for 1000 h, one at 300°C for 500 h, and two at temperatures up to 370°C for up to 260 h. The tests used GaAs/Ge solar cells with etch-through front contacts and GaAs/Ge solar cells with a GaAs cap front contact structure. The solar cells in the 300°C soak tests showed no significant degradation. In the other tests, the solar cells showed severe degradation in open-circuit voltage, and maximum power. Results of these tests show that these solar cells should be able to operate in temperatures up to 180°C for long periods of time (eight years). If the solar cells are required to operate above 180°C for long periods of time, new contact systems must be developed
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; life testing; solar cells; 1000 h; 250 degC; 260 h; 300 degC; 370 degC; 500 h; GaAs-Ge solar cells; accelerated high-temperature soak tests; etch-through front contacts; front contacts; high-temperature exposure; open-circuit voltage; solar array; space missions; stability; Degradation; Etching; Gallium arsenide; Life estimation; Performance evaluation; Photovoltaic cells; Space missions; Stability; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111825
  • Filename
    111825