Title :
Electromigration and 1/f Noise of Aluminum Thin Films
Author :
Chen, T.M. ; Djeu, T.P. ; Moore, R.D.
Author_Institution :
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620
Abstract :
Electrical noise measurements were made for Al thin films subject to electromigration. The results were related to resistance measurements and SEM observation of the films. It was concluded that 1/f noise measurements can be used as a sensitive tool for detecting electromigration and the magnitude of noise is closely related to the time to failure of the films.
Keywords :
Aluminum; Circuits; Conductive films; Conductors; Current density; Electromigration; Noise measurement; Temperature; Testing; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362081
