DocumentCode
2614144
Title
Si Nodule Formation in Al-Si Metallization
Author
Tatsuzawa, T. ; Madokoro, S. ; Hagiwara, S.
Author_Institution
Electron Device Division, Oki Electric Industry Co. Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan
fYear
1985
fDate
31107
Firstpage
138
Lastpage
141
Abstract
Si in Al-Si alloy are precipitated during heat treatment. If process conditions are not appropriate, they grow more than lum, and become causes of some troubles. The size of these "Si nodule" is determined by metallization process conditions. Electromigration tests as a parameter of Si nodule size showed that large Si nodule degraded the reliability of metallization.
Keywords
Annealing; Electromigration; Electron devices; Heat treatment; Heating; Metallization; Metals industry; Silicon alloys; Temperature dependence; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location
Orlando, FL, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1985.362088
Filename
4208615
Link To Document