DocumentCode :
2614340
Title :
High effective area amorphous silicon solar cell using excimer laser process
Author :
Nakajima, S. ; Abe, M. ; Shinohara, Hirofumi ; Arai, Y. ; Ishida, N. ; Satake, A. ; Nishi, K. ; Kugawa, S. ; Uehara, Yuji ; Ishii, M. ; Yamazaki, S.
Author_Institution :
Semicond. Energy Lab. Co. Ltd., Kanagawa, Japan
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
1400
Abstract :
A laser patterning method for fabricating integrated-type amorphous silicon (a-Si) solar cell submodules has been investigated. An excimer laser was used to fabricate integrated-type solar cell submodules with a size of 535 cm2. By the use of the excimer laser, higher throughput and a larger effective area were obtained than with a YAG laser. These submodules had an efficiency of 8.17% under AM 1.5, 100-mW/cm2 and an effective area rate of 93.1%
Keywords :
amorphous semiconductors; elemental semiconductors; laser beam machining; silicon; solar cells; 8.17 percent; amorphous Si solar cells; excimer laser; laser patterning method; semiconductor; solar cell submodules; Ambient intelligence; Amorphous silicon; Electrodes; Laboratories; Laser beams; Optical pulses; Photovoltaic cells; Power lasers; Semiconductor lasers; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111840
Filename :
111840
Link To Document :
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