• DocumentCode
    2614453
  • Title

    Electromigration in Titanium Doped Aluminum Alloys

  • Author

    Towner, Janet M. ; Dirks, Albertus C. ; Tien, Tien

  • Author_Institution
    Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, California 94088
  • fYear
    1986
  • fDate
    31503
  • Firstpage
    7
  • Lastpage
    11
  • Abstract
    Homogeneous films of titanium-doped aluminum and aluminum-1% silicon were evaluated for possible application as interconnects in integrated circuits. Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.
  • Keywords
    Aluminum alloys; Circuit testing; Conducting materials; Copper; Electromigration; Integrated circuit interconnections; Plasma temperature; Sputter etching; Titanium; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1986. 24th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1986.362104
  • Filename
    4208634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614453