Title :
Suppression of Stress Induced Aluminum Void Formation
Author :
Koyama, H. ; Mashiko, Y. ; Nishioka, T.
Author_Institution :
LSI R&D Laboratory, Mitsubishi Electric Co., 4-1 Mizuhara Itami Hyogo, 664 Japan
Abstract :
It is found that aluminum void formation can be suppressed by mercury light irradiation of plasma enhanced chemical vapor deposition silicon nitride filmn coatings. Light beam induced stress relaxation of the SiN film is responsible for the suppression. We believe that presence of hydrogen in the aluminum lattice would create micro voids which aggregate into aluminum voids by the applied stress of the silicon nitride film.
Keywords :
Aggregates; Aluminum; Chemical vapor deposition; Coatings; Hydrogen; Lattices; Plasma chemistry; Semiconductor films; Silicon compounds; Stress;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362107
