Title :
High-power GaN-based LEDs for lighting and display applications
Author :
Stockman, S.A. ; Kim, A.Y. ; Misra, M. ; Grillot, P. ; Cook, L. ; Watanabe, S. ; Mann, R. ; Hudson, L. ; Götz, W. ; Krames, M.R. ; Steigerwald, D. ; Martin, P.S. ; Wall, F. ; Steranka, F.
Abstract :
We review the current state-of-the-art in high-power (>1 W) GaN LED technology, and highlight current challenges in MOCVD epitaxy, device design, and high-volume manufacturing. We also describe recent developments in technology for high-power GaN-based LEDs which are operated beyond 5 W/LED with high efficiency (50 lm/W green, >30 lm/W white) and excellent reliability, and preview future challenges in solid state lighting and display applications.
Keywords :
III-V semiconductors; LED displays; MOCVD; gallium compounds; lighting; semiconductor device models; semiconductor device reliability; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; MOCVD epitaxy; high-power GaN based LEDs; reliability; solid state display application; solid state lighting application; Displays; Epitaxial growth; Gallium nitride; LED lamps; Light emitting diodes; MOCVD; Manufacturing; Solid state lighting;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1271955
