Title :
Enhanced blue emission from Tm-doped AlxGa1-xN electroluminescent thin films
Author :
Lee, D.S. ; Steckl, A.J. ; Hömmerich, U. ; Nyein, E.E. ; Rack, P. ; Fitzgerald, J. ; Zavada, J.M.
Author_Institution :
Nanoelectron. Lab., Cincinnati Univ., OH, USA
Abstract :
In this paper, we report on the growth of in-situ Tm-doped AlxGa1-xN films and the corresponding effect of Al composition on the EL emission. PL and CL show almost same trend as EL with various Al compositions. The 465-nm emission is barely present at x=0.16, it becomes very clear for x≥0.39, and it dominates for x≥0.81. The EL emission at 802 nm experienced the opposite trend, decreasing with Al composition. We have confirmed that blue EL emission becomes dominant over IR emission with increasing Al composition in the AlxGa1-xN host.
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; electroluminescence; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; thulium; wide band gap semiconductors; 465 nm; 802 nm; Al composition; AlxGa1-xN host; AlxGa1-xN:Tm; CL; EL emission; IR emission; PL; cathodoluminescence; electroluminescence emission; enhanced blue emission; in situ Tm doped AlxGa1-xN films; photoluminescence; Electroluminescent devices; Sun; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1271956
