ZnO-based metal-insulator-semiconductor UV light-emitting diodes prepared by ion implantation

Author

Alivov, Ya.I. ; Look, D.C. ; Chukichev, M.V. ; Ataev, B.M. ; Nikitenko, V.A. ; Mamedov, V.V. ; Zinenko, V.I. ; Agafonov, Yu.A.

Author_Institution

Inst. of Microelectron. Technol., Moscow, Russia

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

9

Lastpage

10

Abstract

In this paper, we describe the N⁺-ion implantation of Ga doped ZnO films grown by chemical vapor deposition on a sapphire substrate. Depositing an appropriate metal onto this system can create a metal-insulator-semiconductor (MIS) type diode. Such ZnO-based MIS diodes, and their emission properties are discussed. The ohmic contact, to the lower conducting ZnO insulating layer, is made by indium. Current-voltage measurements shows good, rectifying diode-like behavior, with a threshold voltage near 3 V, and a reverse current of about 10^-6 A. Under forward bias, ultraviolet emission is observed at room temperature (RT), with a wavelength maximum at ∼388 m (∼3.197 eV).

Keywords

II-VI semiconductors; MIS devices; chemical vapour deposition; electroluminescence; electroluminescent devices; gallium; indium; ion implantation; light emitting diodes; nitrogen; ohmic contacts; semiconductor doping; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; 10^-6 A; 293 to 298 K; 3 V; 388 nm; Al₂O₃; Ga doped ZnO films; In-ZnO-ZnO:Ga,N; MIS UV light emitting diode; N ion implantation; ZnO insulating layer; chemical vapor deposition; current-voltage properties; emission properties; indium element; metal-insulator-semiconductor UV light emitting diode; ohmic contact; rectification; room temperature; sapphire substrate; ultraviolet emission; Chemical vapor deposition; Current measurement; Indium; Insulation; Ion implantation; Light emitting diodes; Metal-insulator structures; Ohmic contacts; Wavelength measurement; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271959

Filename

1271959