DocumentCode :
2614626
Title :
A Layer Damage Model for Calculating Thermal Fatigue Lifetime of Power Devices
Author :
Guang-bo, Gao ; An, Chen ; Xiang, Gui
Author_Institution :
Reliability Physics Laboratory, Department of Radio-Electronics, Beijing Polytechnic University, Beijing, PRC
fYear :
1986
fDate :
31503
Firstpage :
79
Lastpage :
86
Abstract :
Based on the experimental data during device power cycling, the mechanical behavior of solder material, and by introducing a new concept "layer damage factor ß", the authors have proposed a layer damage model for calculating thermal fatique lifetime of power devices. The model can be used in estimating fatique lifetime, evaluating soldering quality, obtaining accelerated lifetime plot, designing chip backside metallizations, etc. Experimental results have been shown to support the theory.
Keywords :
Failure analysis; Fatigue; Life estimation; Lifetime estimation; Resistance heating; Semiconductor materials; Temperature; Thermal factors; Thermal resistance; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1986.362114
Filename :
4208645
Link To Document :
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