DocumentCode
2614658
Title
Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy
Author
Dallmann, Achim
Author_Institution
Siemens AG, Microelectronic Technology Center, Otto Hahn Ring 6, 8000 Mÿnchen 83, West Germany
fYear
1986
fDate
31503
Firstpage
95
Lastpage
98
Abstract
With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.
Keywords
Charge carrier processes; Current measurement; Dielectric measurements; Electric variables measurement; Electrodes; Electron beams; Scanning electron microscopy; Testing; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362116
Filename
4208647
Link To Document