• DocumentCode
    2614769
  • Title

    Optimum band gap for amorphous silicon based solar cells

  • Author

    Fiorini, P. ; Mittiga, A. ; Chambouleyron, I. ; Evangelisti, F.

  • Author_Institution
    Dept. of Phys., Rome Univ., Italy
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    1526
  • Abstract
    The problem of the optimum bandgap for amorphous solar cells is considered. The transport equations governing the behavior of p-i-n solar cells have been numerically solved as a function of the bandgap energy and the thickness of the active layer. It is found that very small benefits in the conversion efficiency of single-gap amorphous solar cells can be obtained with the use of a-SixGe1-x :H alloys, the forbidden band of a-Si:H appearing to be nearly optimum. The results obtained lead to the conclusion that a-Si:H is presently the best material for single junction solar cells
  • Keywords
    amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; silicon; solar cells; active layer thickness; amorphous Si:H; amorphous SixGe1-x:H; amorphous silicon based solar cells; conversion efficiency; optimum bandgap; p-i-n solar cells; transport equations; Amorphous materials; Amorphous silicon; Crystallization; Equations; Germanium alloys; Optical losses; PIN photodiodes; Photonic band gap; Photovoltaic cells; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111863
  • Filename
    111863
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614769