Title :
Modeling of a reflection MQW modulator with multiple pass bands
Author :
Xu, M.G. ; Siliquini, J.F. ; Dell, J.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
We propose and investigate a modulator structure which acts as a conventional reflection modulator at one wavelength and allows several closely separated wavelengths to be transmitted unchanged. Modeling shows that this type of modulator can be designed with larger than 20 dB contrast ratio and lower than 2.5 dB insertion loss for the reflection wavelength, while having near unity transmission for the transmission wavelengths. The position of transmission peaks can be fully customized
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroreflectance; gallium arsenide; semiconductor device models; semiconductor quantum wells; 2.5 dB; 820 to 865 nm; AlGaAs/GaAs; GaAs-Al0.3Ga0.7As; asymmetric Fabry-Perot reflection modulator; broadband optical switches; contrast ratio; insertion loss; modeling; multiple pass bands; reflection MQW modulator; reflection wavelength; transmission peaks; transmission wavelengths; Absorption; Insertion loss; Optical reflection; Photodetectors; Potential well; Propagation losses; Quantum well devices; Reflectivity; Stark effect; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610082
