DocumentCode
2614826
Title
Power GaAs FET RF Life Test using Temperature-Compensated Electrical Stressing
Author
Russell, K.J. ; Dhiman, J.K.
Author_Institution
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109. (818) 354-6080
fYear
1986
fDate
31503
Firstpage
150
Lastpage
156
Abstract
GaAs FETs were aged in RF operation, while keeping the electrical stress on the WETs like that in a typical application. Lifetimes measured were significantly lower than those predicted by life tests using dc bias only. Significant dependence of lifetimes upon the wafer process lot was found. Voltage screening did not provide more reliable devices.
Keywords
Aging; FETs; Gallium arsenide; Life testing; Performance evaluation; Power generation; Radio frequency; Stress; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362126
Filename
4208657
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