Integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity

Author

Pei, Z. ; Shi, J.-W. ; Hsu, Y.-M. ; Yuan, F. ; Liang, C.-S. ; Liu, C.W. ; Pan, T.-M. ; Lu, S.C. ; Hsieh, W.-Y. ; Tsai, M.-J.

Author_Institution

Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

18

Lastpage

19

Abstract

In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor´s f_T of ∼ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.

Keywords

Ge-Si alloys; avalanche breakdown; elemental semiconductors; integrated optics; optical receivers; phototransistors; semiconductor materials; semiconductor quantum wells; silicon; 3 GHz; 70 GHz; MQW absorption layer; SiGe-Si; SiGe/Si multiple quantum well absorption layers; avalanche bias; avalanche breakdown; avalanche responsivity; integratable SiGe phototransistor; integrated photoreceiver; Bandwidth; Circuits; Electromagnetic wave absorption; Germanium silicon alloys; Heterojunction bipolar transistors; Infrared detectors; Optical fiber communication; Phototransistors; Quantum well devices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271975

Filename

1271975