Monolithically integrated Si/SiGe resonant interband tunneling diodes/CMOS MOBILE latch with high voltage swing

Author

Sudirgo, S. ; Nandgaonkar, R.P. ; Curanovic, B. ; Hebding, J. ; Hirschman, K.D. ; Islam, S.S. ; Rommel, Sean L. ; Kurinec, S.K. ; Thompson, P.E. ; Jin, N. ; Berger, P.R.

Author_Institution

Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

22

Lastpage

23

Abstract

The Si/SiGe RITDs grown by MBE have been monolithically integrated with CMOS for the first time. The integrated devices resulted in a PVCR (peak-to-valley current ratio) of 2.8 at room temperature, showing promise towards the realization of RITD/CMOS circuitry. A RITD-NMOS MOBILE latch has been demonstrated in Si. This logic element enables digital and ternary circuit design for high density storage. The I-V characteristics of the integrated CMOS/RITD devices and I_D-V_D characteristics of NMOS and PMOS have been studied.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOSFET; elemental semiconductors; flip-flops; monolithic integrated circuits; resonant tunnelling diodes; semiconductor materials; silicon; 293 to 298 K; CMOS MOBILE latch; MBE; NMOS; PMOS; Si-SiGe; Si/SiGe resonant interband tunneling diodes; molecular beam epitaxy; monolithic integration; peak-valley current ratio; room temperature; voltage swing; Circuits; Diodes; Germanium silicon alloys; Latches; Multivalued logic; Resonance; Silicon germanium; Temperature; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271977

Filename

1271977