DocumentCode
2614938
Title
Hot Electron Induced Retention Time Degradation in MOS Dynamic RAMs
Author
Cahoon, E.C. ; Thornewell, K. ; Tsai, P. ; Gukelberger, T. ; Sylvestri, J. ; Orro, J.
Author_Institution
Component Vendor Assurance, IBM, P. O. Box 390, Poughkeepsie, N.Y. 12602
fYear
1986
fDate
31503
Firstpage
195
Lastpage
198
Abstract
Hot electron induced MOSFET instabilities have been found to significantly degrade the retention time of dynamic RAMs. Failure is due to the effect of increased subthreshold leakage on balanced sense nodes. Plasma nitride passivations greatly increase the degradation rate. The complex synergism between device degradation and DRAM parametric shift demonstrates the necessity of accelerated stress of functional modules.
Keywords
Acceleration; DRAM chips; Degradation; Electrons; MOSFET circuits; Passivation; Plasma accelerators; Plasma devices; Random access memory; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362133
Filename
4208664
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