DocumentCode
2614980
Title
Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers
Author
Bhattacharya, Surya ; Dalapati, G.K. ; Das, S. ; Chakraborty, S. ; McCarthy, J. ; Armstrong, B.M. ; Gamble, H.S. ; Maiti, C.K. ; Perova, T. ; Moore, A.
Author_Institution
Sch. of Electr. & Electron. Eng., Queen´´s Univ. of Belfast, UK
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
29
Lastpage
30
Abstract
We report for the first time, the leakage current conduction mechanism in ultra-thin plasma enhanced chemical vapor deposition ZrO2 gate dielectrics on strained Ge layer at low temperature of about 150 °C. The deposited film show good electrical properties as gate dielectrics and are suitable for microelectronic applications. The feasibility of strained-Ge and high-K dielectrics is also demonstrated.
Keywords
MOS capacitors; Poole-Frenkel effect; Raman spectra; dielectric thin films; leakage currents; plasma CVD coatings; transmission electron microscopy; zirconium compounds; 150 degC; Ge; ZrO2; electrical properties; high-k ZrO2 gate dielectric films; leakage current conduction mechanism; microelectronic applications; strained Ge layer; ultra thin plasma enhanced CVD; ultra thin plasma enhanced chemical vapor deposition; Dielectric films; High K dielectric materials; High-K gate dielectrics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1271980
Filename
1271980
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