Title :
Physical characterization of HfO2 deposited on Ge substrates by MOCVD
Author :
Van Elshocht, S. ; Brijs, B. ; Caymax, M. ; Conard, T. ; De Gendt, S. ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Van Steenbergen, J. ; Zhao, C. ; Heyns, M.
Author_Institution :
IMEC, Heverlee, Belgium
Abstract :
In this paper, we study the growth properties of HfO2 on Ge by MOCVD, using TDEAH and O2 precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).
Keywords :
MOCVD; Rutherford backscattering; X-ray diffraction; dielectric materials; dielectric thin films; elemental semiconductors; ellipsometry; germanium; hafnium compounds; scanning electron microscopy; secondary ion mass spectra; substrates; time of flight mass spectroscopy; Ge; HfO2; HfO2 deposited Ge substrate; MOCVD; RBS spectra; Rutherford backscattering spectra; TEM; TOFSIMS; X-ray diffraction; XRD; ellipsometry; physical properties; time of flight secondary ion mass spectroscopy; transmission electron microscopy; Annealing; Hafnium oxide; MOCVD; Rough surfaces; Semiconductor films; Substrates; Surface roughness; X-ray scattering;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1271981
