Title :
Soft Error Rate Reduction in Dynamic Memory with Trench Capacitor Cell
Author :
Ishiuchi, H. ; Watanabe, T. ; Tanaka, T. ; Kishi, K. ; Ishikawa, M. ; Goto, N. ; Kohyama, K. ; Noji, H. ; Ozawa, O.
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 Japan
Abstract :
Alpha-particle-induced soft error rate of dynamic memory with trench capacitor cell has been studied experimentally. Both the bit line mode and the cell mode of the soft error rate can be effectively reduced utilizing a p-well structure on p-type substrate. The reduction ratio is about 1/200 or less.
Keywords :
Alpha particles; Capacitance; Capacitors; Error analysis; Life estimation; Random access memory; Semiconductor device measurement; Substrates; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362139
