Characterization of tunnel oxides for non-volatile memory (NVM) applications

Author

Ackaert, Jan ; Vermeulen, Tom ; Lowe, Antony ; Boonen, Sylvie ; Yao, Thierry ; Prasad, Jagdish ; Thomason, Mike ; Van Houdt, Jan ; Degraeve, Robin ; Haspeslagh, Luc ; Hendric, Paul

Author_Institution

AMIS, Oudenaarde, Belgium

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

33

Lastpage

34

Abstract

The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used. They are: (1) Dry oxidation at 900 C which gives acceptable oxide quality in the thickness range of 100 Å (2) 5% O₂ diluted oxidation at 900 C, (3) 5% O₂ diluted oxidation at 960 C and (4) Wet oxidation at 750 C which gives superior results even for a minimal oxide thickness of 88.9 Å.

Keywords

MOS memory circuits; flash memories; oxidation; 100 Å; 750 C; 8 to 10 nm; 88.9 Å; 900 C; 960 C; diluted oxidation; dry oxidation; moving bit measurements; nonvolatile MOS floating gate memory devices; tunnel oxides; wet oxidation; Ambient intelligence; Circuits; Current measurement; Leakage current; Measurement techniques; Nonvolatile memory; Oxidation; Performance evaluation; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271982

Filename

1271982