Title :
Effect of hydrogen plasma treatment on SnO2:F films for use in a-Si solar cells
Author :
Sato, Kazuo ; Gotoh, Yoshio ; Hayashi, Yasuo ; Nishimura, Hiromichi
Author_Institution :
Asahi Glass Co. Ltd., Yokohama, Japan
Abstract :
The effects of hydrogen plasma treatment on the properties of SnO 2:F films were investigated using X-ray photoelectron spectroscopy (XPS). It was found that silicon oxide formed at the interface between SnO2:F and a-Si:H was decreased by the pretreatment at temperatures above 150°C for highly transparent films with low carrier concentration. The decrease of silicon oxide was closely correlated to a decrease in resistivity corresponding to an increase in Hall mobility of SnO2:F. This suggests that the oxygen desorption from the SnO2:F surface is a dominant effect of the pretreatment. The a-Si solar cell fabricated oil the pretreated SnO2:F film showed improved fill-factor and conversion efficiency, which could be explained by the lowered sheet resistance and the improved SnO2:F/a-Si:H interface
Keywords :
Hall effect; X-ray photoelectron spectra; amorphous semiconductors; carrier mobility; desorption; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; fluorine; semiconductor materials; semiconductor thin films; silicon; solar cells; surface treatment; tin compounds; 150 degC; H2; Hall mobility; SnO2:F-Si:H; X-ray photoelectron spectroscopy; amorphous semiconductor; carrier concentration; conversion efficiency; desorption; fill-factor; films; interface; plasma treatment; resistivity; sheet resistance; solar cells; transparent films; Conductivity; Hall effect; Hydrogen; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor films; Silicon; Spectroscopy; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111875
