Title :
Effect of the deposition parameters on the electro optical properties and morphology of microcrystalline hydrogenated silicon alloys
Author :
Dirani, E.A.T. ; Pereyra, I. ; Andrade, A.M. ; Soler, M.A.G. ; Martins, Rui P.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ.
Abstract :
Microcrystalline phosphorus-doped hydrogenated silicon alloy films were deposited in a remote plasma CVD (chemical vapor deposition) system. The film properties were studied as a function of RF power density and hydrogen concentration in the reaction gas mixture. The properties of the deposited films are extremely sensitive to the RF power density, in the studied range of 250 mW/cm2 to 625 mW/cm2. Very low values of electrical resistivity were obtained. For an RF power density of 500 mW/cm2, ρ=3×10-2 Ω-cm, while ρ=1.9×103 Ω-cm for 625 mW/cm2, indicating the predominance of the amorphous tissue over the microcrystalline phase. High doping efficiencies which can be correlated to large grain size are indicated by the very low values of the activation energy as low as 30 meV for 500 mW/cm2, that were obtained
Keywords :
electro-optical effects; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; grain size; hydrogen; phosphorus; plasma CVD coatings; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; RF power density; Si:H,P; activation energy; doping efficiencies; electrical resistivity; electro optical properties; films; grain size; microcrystalline; morphology; remote plasma CVD; semiconductor; Chemical vapor deposition; Hydrogen; Optical films; Plasma chemistry; Plasma density; Plasma properties; Radio frequency; Semiconductor films; Silicon alloys; Ultraviolet sources;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111876
