Microstructural examination of the influence of Si substrate orientation on the morphology of CdTe/ZnTe films

Author

Sarney, W.L. ; Brill, G. ; Dhar, N.K.

Author_Institution

U.S. Army Res. Lab., Adelphi, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

40

Lastpage

41

Abstract

In this paper, we study about the microstructural characterization of CdTe/ZnTe thin films grown on Si substrates having (311), (211), and (111) orientations using transmission electron microscopy (TEM). TEM images of a ZnTe buffer layer grown on a (111) Si substrate that has twinning across the (111) plane. The twinned and untwinned regions have identical crystal structures, but the twinned region is misoriented across the twinning plane with respect to the parent crystal.

Keywords

II-VI semiconductors; cadmium compounds; crystal microstructure; crystal orientation; semiconductor epitaxial layers; transmission electron microscopy; twinning; zinc compounds; CdTe-ZnTe; CdTe/ZnTe films; Si; Si substrate (111) orientation; Si substrate (211) orientation; Si substrate (311) orientation; TEM; ZnTe buffer layer; crystal orientations; crystal structures; microstructural morphology; parent crystal; transmission electron microscopy; twinning; Buffer layers; Lattices; Mirrors; Morphology; Semiconductor films; Substrates; X-ray detection; X-ray detectors; X-ray diffraction; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271985

Filename

1271985