Preliminary study of As-for-Sb exchange for device applications

Author

Sarmiento, Tomas ; May, Gary S.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

42

Lastpage

43

Abstract

The role of the growth conditions in the As-for-Sb exchange reaction is discussed in this paper. Superlattices formed by As exposure of Sb-stabilized GaSb surfaces were grown to compare the resulting anion exchange under different conditions. Statistical experimental design was used to systematically evaluate the effect of different growth conditions. The experiments were performed on GaSb [001] epi-ready substrates in a Varian Gen-II solid source molecular beam epitaxy (MBE) system equipped with both As and Sb crackers. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface reconstruction and to determine the growth rate. High resolution X-ray diffraction (HRXRD) was used to characterize the structures.

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; semiconductor superlattices; statistical analysis; surface reconstruction; As-Sb exchange reaction; GaAsSb; GaSb surfaces; MBE; RHEED; Varian Gen-II solid source molecular beam epitaxy system; XRD; anion exchange; growth rate; high resolution X-ray diffraction; reflection high energy electron diffraction; statistical analysis; superlattices; surface reconstruction; Design for experiments; Electrons; Molecular beam epitaxial growth; Optical reflection; Solids; Substrates; Superlattices; Surface cracks; Surface reconstruction; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271986

Filename

1271986