Tin oxide electrodes for a-Si:H solar cells deposited by spray pyrolysis technique

Author

Antonaia, A. ; Aprea, S. ; Menna, P.T.

Author_Institution

ENEA-Centro Ricerche Fotovoltaiche, Portici, Italy

fYear

1990

fDate

21-25 May 1990

Firstpage

1601

Abstract

A spray pyrolysis technique for the deposition of low-cost, high-quality fluorine-doped tin oxide layers for amorphous silicon solar cells has been developed. The process is carried out in two separate phases whose durations have been optimized according to the quality of the deposited material. Tin oxide films with a resistivity of 10^-4 Ω-cm and an absorption coefficient, of about 1000 cm^-1 (at 600 nm) have been prepared in the temperature range from 350 to 500°C. A good uniformity of the electrical and optical properties has been obtained for areas of deposition up to 100 cm². The optimized growth conditions are provided

Keywords

amorphous semiconductors; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; fluorine; hydrogen; optical constants; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; solar cells; spray coatings; tin compounds; 350 to 500 degC; 600 nm; Si:H; SnO₂:F electrodes; absorption coefficient; amorphous; electrical properties; films; growth; optical properties; semiconductor; solar cells; spray pyrolysis; uniformity; Absorption; Amorphous silicon; Conductivity; Electrodes; Optical films; Optical materials; Photovoltaic cells; Spraying; Temperature distribution; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111879

Filename

111879