• DocumentCode
    2615132
  • Title

    Line Width Dependence of Stresses in Aluminum Interconnect

  • Author

    Jones, Robert E., Jr.

  • Author_Institution
    Inmos Corporation, P. O. Box 16000, Colorado Springs, CO 80935. (303) 630-4381
  • fYear
    1987
  • fDate
    31868
  • Firstpage
    9
  • Lastpage
    14
  • Abstract
    Finite-element simulations show that the thermally generated stresses in passivated aluminum-silicon lines increase rapidly with decreasing line width. The resulting tensile stresses can be several times the yield strength. This results in a high driving force for creep voids which are a significant reliability problem for narrow lines.
  • Keywords
    Aluminum; Constraint theory; Creep; Dielectric substrates; Dielectric thin films; Passivation; Springs; Tensile stress; Thermal stresses; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1987. 25th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1987.362148
  • Filename
    4208682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615132