Title :
Line Width Dependence of Stresses in Aluminum Interconnect
Author :
Jones, Robert E., Jr.
Author_Institution :
Inmos Corporation, P. O. Box 16000, Colorado Springs, CO 80935. (303) 630-4381
Abstract :
Finite-element simulations show that the thermally generated stresses in passivated aluminum-silicon lines increase rapidly with decreasing line width. The resulting tensile stresses can be several times the yield strength. This results in a high driving force for creep voids which are a significant reliability problem for narrow lines.
Keywords :
Aluminum; Constraint theory; Creep; Dielectric substrates; Dielectric thin films; Passivation; Springs; Tensile stress; Thermal stresses; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1987.362148
