Title :
Moisture Resistance of Borophosphosilicate Glass Films
Author :
Yoshimaru, M. ; Matsuhasi, H. ; Ajioka, T. ; Matsui, H.
Author_Institution :
VLSI Research & Development Center, Oki Electric Industry Co., Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan. (0426) 63-1111
Abstract :
The moisture resistance of chemically vapor deposited borophosphosilicate glass (BPSG) films has been studied. The films were annealed at 900°C and exposed to saturated deuterium oxide (D2O) vapor at 120°C. Phosphorus leaching out of the films and water penetration into the films were measured. It has been found that the films with a higher phosphorus concentration not exceeding 9 wt%(P) shows the highest resistance to moisture.
Keywords :
Annealing; Boron; Conductive films; Deuterium; Glass; Leaching; Mass spectroscopy; Moisture; Temperature; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1987.362150
