32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs

Author

Abele, P. ; Kallfass, I. ; Schumacher, Hermann ; Zeuner, M. ; Muller, Tim ; Hackbarth, Thomas ; Konig, U. ; Chrastina, D. ; von Kanel, H.

Author_Institution

Ulm Univ., Germany

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

55

Lastpage

56

Abstract

Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of ±0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of ±0.8 dB.

Keywords

Ge-Si alloys; MMIC amplifiers; coplanar waveguides; high electron mobility transistors; semiconductor device models; semiconductor materials; 0.4 dB; 0.8 dB; 32 GHz; 4 dB; 40 GHz; 5.5 dB; MMICs based N-channel SiGe MODFET; Si; SiGe; bandwidth distributed amplifier; common source transistor configuration; coplanar waveguide topology; high electron mobility transistors; high resistivity silicon substrate; Bandwidth; Coplanar waveguides; Distributed amplifiers; Gain; Germanium silicon alloys; HEMTs; MMICs; MODFETs; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271993

Filename

1271993